BAE Systems has started manufacturing a 3U CompactPCI Power Architecture board with MRAM for space designs. The company worked with GlobalFoundries on the RAD510 System-on-Chip that is the core of the single board computer (SBC) also called the RAD510.
The RAD510 chip is built on GF’s RH45 45nm silicon-on-isolator (SOI) technology and provides Power Architecture software-compatible processing with less power than the current 6U RAD750 board.
The RAD510 SoC is based around the RAD5500 processor core operating frequency ranges from 66MHz to 462MHz, supporting both low power and high performance applications with 1GB SDRAM with SNCDND, 1GB of TMR NAND Flash and 2MB of MRAM. There are 32 programmable inputs, outputs, and interrupts with a 4-port SpaceWire router supporting up to 330Mbit/s on each link.
The board delivers 3 MIPs/MHz, giving 198 MIPS @ 66 MHz (TBR) and 1,386 MIPS @ 462 MHz (TBR). It is qualified to a total dose of 50 Krad (Si) and latch-up immune to 85MeV-cm2/mg.
“The RAD510 SBC is the natural evolution of our RAD750 heritage microprocessor-based SBC, which has powered many of the most important national space assets,” said Ricardo Gonzalez, director of Space Systems at BAE Systems. “These high-reliability computers increase performance capability for satellites and other spacecraft, making space missions more effective. BAE Systems’ relationship with GlobalFoundries began in 2001 with the development of the highly successful RH25 semiconductor technology node.”
The RAD510 SoC is already being integrated into the CompactPCI boards being made at BAE Systems’ facility in Manassas, Va. is a U.S. Department of Defense Category 1A Microelectronics Trusted Source.
“We are proud to work with BAE Systems and leverage the performance, reliability, and energy efficiency of our 45nm semiconductor platform to meet the stringent requirements of space,” said Mike Hogan, senior vice president and general manager of Automotive, Industrial and Multi-market at GF. “As the industry leader in semiconductors for sensitive aerospace and defense applications, GF knows what it takes to develop and manufacture solutions requiring the highest levels of security.”
The RAD510 SoCs are manufactured at GF’s Fab 10 facility in East Fishkill, New York, also a U.S. Department of Defense Category 1A Microelectronics Trusted Source. GF and BAE Systems have initiated the process of transitioning the manufacturing of 45 nm SOI technology to GF’s most advanced facility, Fab 8 in Malta, New York, making it available to the space community in the future.
BAE Systems also offers a suite of radiation-hardened Serial RapidIO network products to go alongside the RAD510 SBC to manage and route data through the system. These include the RADNET 1848-PS, an 18-Port RapidIO Packet Switch, the RADNET 1616-XP Crosspoint, a protocol agnostic SerDes signal circuit switch and replicator, and the RADNET SRIO-EP, a Serial RapidIO endpoint.
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