Power switch can take 10A in a TO-257 package at up to 225°C
The silicon carbide MOSFET is specifically built for power converter applications in high-temperature and harsh environments. It is available in a hermetically-sealed TO-257 metal package, the case being isolated from the switch terminals, and features low junction-to-case thermal resistance (1.1°C/W). The product is guaranteed for reliable operation on the full range -55 to +225°C. It has a breakdown voltage in excess of 1200V and is capable of switching currents up to 10A at the maximum temperature (Tj=225°C). The device features a body diode that can be used as free-wheeling diode. The switch can be controlled with a typical gate voltage (VGS) of -2V / +20V. The transistor’s RDS-ON exhibits 90mΩ at 25°C and 150mΩ at 225°C with VGS=20V. Support and characterization data can also be provided to drive the transistor at lower VGS voltages (e.g. 5V or 10V). This new device features low – and temperature-independent – switching energy of less than 400µJ at 600V/10A.
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