Protect vehicle ECUs against reverse-battery connections
The DMP4015SPSQ MOSFET acts as an “ideal diode”; driving this device only requires a minimal number of passive components. By comparison, N-channel MOSFETs require a charge pump to provide the gate drive voltage, adding complexity, cost and component count. Eliminating the switching topology of a charge pump also avoids issues with EMI emissions.
The avalanche rugged DMP4015SPSQ is 100% unclamped-inductive switch (UIS) tested to ensure the MOSFET will withstand the worst-case ISO7637 energy pulse that would occur if the supply was disconnected while powering an inductive load. The low RDS(on) of the DMP4015SPSQ, less than 11 mΩ, ensures that power loss is minimised, resulting in lower temperature operation; this eases thermal design considerations and improves reliability. The parallel configuration of several MOSFETs can further reduce power losses, by a factor of n².
The DMP4015SPSQ comes in a PowerDI5060 package priced at $0.38 (1000). Also available, for the same application, are the DMP4015SK3Q in TO252 (DPAK) package and DMP4015SSSQ in SO-8 package.
Diodes; www.diodes.com
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