PSU MOSFET driver boosts functional robustness, with low power loss

PSU MOSFET driver boosts functional robustness, with low power loss

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By eeNews Europe

Enhancing the existing EiceDRIVER family, the 2EDN family links control ICs and MOSFET, (for example,Infineon’s own CoolMOS C7), as well as GaN switching devices. The 2EDN MOSFET driver IC enables high system level efficiencies, high power density and consistent system robustness.

The 2EDN EiceDRIVER ICs come in industry standard 8-pin packages and feature two independent, non-isolated low-side channels, each capable of providing a 5A source and sink peak current. Both channels operate with typical rise and fall times of 5 nsec, while the 1 nsec channel-to-channel delay matching allows configuration of simultaneous switching to double the total drive current. Despite the high current, the output stages offer a very low RDS(ON), minimising power dissipation in the driver IC even if a very small or no external gate resistor is used. Robustness against ground bounce for system reliability is ensured through the ability of the driver ICs to handle up to -10VDC at the control and enable inputs.

A DSO packaged version with under voltage lock out (UVLO) of 4V is initially available (a UVLO variant with 8V; and a TSSOP package in 4 and 8V will be available in January 2016. The versions in WSON package with both 4V and 8V UVLO will be launched in a second wave in the first quarter of 2016).


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