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Pulsed mini switch for GaN transistors

Pulsed mini switch for GaN transistors

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By Jean-Pierre Joosting



It works with XSYSTOR 100 and 200 Series controllers to protect, operate, and modulate the GaN device. The unit is rated for drain voltages from 28 to 80 V with very-low Rds ON.

The I/O ports of this tiny switch are castellated for solder joints at 0.05-inch pitch, and the module can be placed in any direction of RF flow for easy integration of GaN amplifiers in high speed, pulsed power systems. Clock speed rise and fall times are as fast as <200 ns. Operating temperature is specified for -40 to 85°C but will withstand 175°C with derated voltage and current capacity.

www.rfmw.com

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