Qorvo buys UnitedSiC to expand into discrete power
UnitedSiC will become part of Qorvo’s Infrastructure & Defense Products (IDP) business and will continue to be led by Dr. Chris Dries as general manager of Qorvo’s Power Device Solutions.
The value of the deal was undisclosed, but investors included Qorvo-competitor Analog Devices which also has a long term supply agreement with UnitedSiC. Qorvo was formed from the merger of TriQuint and RF MIcro Devices in 2015 and has a focus on RF power devices and power management chips.
- Analog Devices buys into UnitedSiC for wide bandgap power
- 750V trench SiC FET takes on silicon
- Power trends: Silicon carbide makes the drop
“The addition of United Silicon Carbide to our IDP business significantly expands our market opportunities in high-power applications. This acquisition enables Qorvo to deliver high-value, best-in-class intelligent power solutions covering power conversion, motion control and circuit protection applications,” said Philip Chesley, president of Qorvo IDP.
“Our team is thrilled to expand our SiC portfolio as part of Qorvo and continue to build the business with speed and scale, working to accelerate SiC adoption with the industry’s highest performance devices,” said Dries. “Our SiC technology, together with Qorvo’s complementary Programmable Power Management products and world-class supply chain capabilities, enable us to deliver superior levels of power efficiency in advanced applications.”
United Silicon Carbide’s product portfolio now spans more than 80 SiC FETs, JFETs and Schottky diode devices. Based on a cascode configuration that combines a SiC JFET with low cost silicon MOSFET in a low inductance package, the recently announced Generation 4 SiC FETs are specified at 750V at 5.9 milliohm RDS(on) for higher efficiency in EV chargers, DC-DC converters and traction drives, as well as telecom/server power supplies, variable speed motor drives and solar photovoltaic (PV) inverters.
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