Qorvo set to go head to head with TI on GaN IPM power modules
Cambridge GaN Devices (CGD)is partnering with Qorvo on a reference design and evaluation kit (EVK) using GaN for 500W to 2kW motor control applications.
The deal puts Qorvo head to head with Texas Instruments for IPM intelligent power modules using the ICeGaN GaN transistors from CGD.
CGD aims to speed the use of GaN power ICs in BLDC and PMSM applications, resulting in higher power, highly efficient, compact and reliable systems. Qorvo is building an EVK for its PAC5556A motor/control IC that is powered by CGD’s ICeGaN H2 series devices and this is expected to result in a GaN-based intelligent power module (IPM),
“As they develop the module we will support them but we want to focus on making very good GaN,” Peter di Maso, Vice President Business Development tells eeNews Europe.
“Because ICeGaN – unlike other GaN implementations from other companies – integrates the interface circuitry but not the controller together with the GaN HEMT, it is simple to combine with highly integrated motor controller and drive ICs such as Qorvo’s PAC5556A 600 V High Performance BLDC / PMSM Motor Controller and Driver,” said Giorgia Longobardi, CEO of CGD.
CGD is also working on a higher power version using the P2 ICeGaN transistor launched yesterday.
“What we have done with the reference design with H2 is bring highly integrated 5556 motor controller but is not user friendly with the standard GaN, so ICEGAN enables GAN for them and it’s a movement that people will take notice of, and we are working with them on a P2 reference design,” said di Maso.
The H2 reference design is available today and shown at the PCIM exhibition in Nuremberg, Germany this week, and EVK RD5556GaN will be available for purchase in Q3 2024.
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