Qorvo’s QPA3069 100W GaN S-Band Power Amplifier

Qorvo’s QPA3069 100W GaN S-Band Power Amplifier

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By eeNews Europe

Mouser Electronics is now stocking the QPA3069 power amplifier from Qorvo. Engineered for defense and aerospace applications, the 100 W QPA3069 provides high power density and power-added efficiency for 2.7 – 3.5 GHz radio frequency (RF) based designs. Fabricated with Qorvo’s production 0.25 µm gallium nitride-on-silicon carbide (GaN-on-SiC) process, this packaged high-power, S-band amplifier simplifies system integration and offers impressive performance in a compact 7.0 × 7.0 × 0.85 mm package.

The Qorvo QPA3069 power amplifier features greater than 58 dBm of saturated output power and over 25 dB of large-signal gain. The device’s power-added efficiency (PAE) is rated at 53 percent, and the RF output power where the device starts to draw positive gate current (PSAT) is measured at 50 dBm. The amplifier features input return loss as low as 13 dB and output return loss as low as 7 dB. To simplify system integration, the QPA3069 also supplies two RF ports that are fully matched to 50 ohms, each integrated with DC blocking capacitors.

Qorvo’s QPA3069 has an operating temperature of minus 40 to 85 degrees Celsius, and a power dissipation of 117 W at the top of the temperature range. The lead-free, RoHS-compliant amplifier is ideal for S-band radar applications.

To learn more about the Qorvo QPA3069 power amplifier and the associated evaluation board, visit

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