Quobly shows spin qubits on FD-SOI CMOS process
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French quantum computing startup Quobly has shown spin qubits for quantum gates built on mainstream CMOS FD-SOI process technology.
Quobly, previously Siquance, is a spin out of the CEA-Leti research labs in Grenoble developing spin qubits for quantum computing, integrating quantum and classical elements on the same chip.
The devices are built on Leti’s pilot line with fully depleted silicon on insulator (FD-SOI) process technology and can be transferred to commercial foundries such as STMicroelectronics, GlobalFoundries, and Samsung rather than requiring a specialist fab process.
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The spin qubits shown at the IEDM 2024 conference this week show low temperature operation and characterization of digital and analog performance for a single qubit using hole and electron spin qubits using the CEA-Leti’s R&D pilot line.
This ambipolar platform optimizes system performance, leveraging electrons’ long coherence times for memory, as well as the holes’ strong spin-orbit interaction for fast data processing. The manipulation speed for holes is 1μs and there is a 40μs coherence time (Hahn echo) for electrons.
The cryogenic control electronics shows a voltage gain up to 75dB, noise levels of 10-11V²∙μm²/Hz, and threshold voltage variability of 1.29mV∙μm.
The company has also demonstrated charge control in the commercial GF 22FDX process to further define a standard cell for a two-qubit gate. This enables double quantum dot operation as a key step towards large scale commercial quantum computers.
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