Rad hard GaN transistors for space designs

Rad hard GaN transistors for space designs

New Products |
By Nick Flaherty

EPC has launched two radiation-hardened GaN FETs for space applications including LEO satellites.

The EPC7020 is a 200 V, 11 mΩ, 170 APulsed, rad-hard GaN FET in a 12 mm2 footprint (above, centre) while the EPC7003 is a 100 V, 30 mΩ, 42 APulsed, rad-hard GaN FET in a 1.87 mm2 footprint, showing the difference in the die size for voltage and on-resistance. 

Both devices have a total dose radiation rating greater than 1,000K Rad(Si) and SEE immunity for LET of 83.7 MeV/mg/cm2 with VDS up to 100% of rated breakdown.

The devices are offered in the chip-scale package as the rest of the family of devices and the commercial eGaN FET and IC family.  Packaged versions will be available from EPC Space.

eGaN FETs and ICs are smaller, operate 40 times better electrically, and are lower cost than the Rad Hard silicon devices typically used in high reliability and space applications. GaN devices also support higher total radiation levels and SEE LET levels than silicon solutions.

Applications benefiting from the performance and fast deployment of these devices include DC-DC power converters, motor drives, lidar, deep probes, and ion thrusters for space applications, satellites including those for LEO and GEO orbits, and avionics.

“The Rad Hard product family ranges from 40 V to 200 V and from 4 A to 530 A covering a wide range of applications in harsh environments, such as space including interplanetary scientific missions, high altitude flight, and other high reliability military applications”, said Alex Lidow, CEO, and co-founder of EPC

The EPC7020 and EPC7003 are available for engineering sampling now.;

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