Rad-tolerant 3-volt NOR flash memory organized as 8Mx8 or 4Mx16

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By eeNews Europe

The UT8QNF8M8 will be offered at 10 and 30 krads(Si) with a goal of 50 krads(Si) and SEL immunity of 80MeV-cm2/mg. The device operates from a single 3.3V power supply for both read and write functions, in a temperature range from -55 to +105°C. The device is designed to be programmed in-system with 3.3-volt Vcc supply and can also be programmed in standard PROM programmers. It comes in a 48-lead flatpack, Q and Q+ qualified and will be available to Standard Microcircuit Drawings. Prototypes are available now and production in 1Q12.

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