Redesigned package reduces IGBT conduction and switching losses
Vishay Intertechnology has redesigned the packages for its half-bridge IGBT power modules to reduce conduction and switching losses as a drop in replacement for 34mm modules.
The redesigned INT-A-PAK package for Vishay’s Trench IGBT devices lower conduction or switching losses in high current inverter stages for transportation, energy, and industrial applications.
The VS-GT100TS065S, VS-GT150TS065S, VS-GT200TS065S, VS-GT100TS065N, and VS-GT200TS065N offer low VCE(ON) or low Eoff combining Trench IGBTs with Gen IV FRED Pt anti-parallel diodes with ultra soft reverse recovery characteristics.
A new gate pin orientation means the INT-A-PAK package is now 100 % compatible with the 34 mm industry-standard package to offer a mechanical drop-in replacement.
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The industrial-level devices will be used in power supply inverters for railway equipment; energy generation, distribution, and storage systems; welding equipment; motor drives; and robotics.
To reduce conduction losses in output stages for TIG welding machines, the VS-GT100TS065S, VS-GT150TS065S, and VS-GT200TS065S offer an industry-low collector to emitter voltage of ≤ 1.07 V at +125 °C and rated current. For high frequency power applications, the VS-GT100TS065N and VS-GT200TS065N offer extremely low switching losses, with Eoff down to 1.0 mJ at +125 °C and rated current.
The RoHS-compliant IGBT half-bridge modules feature 650 V collector to emitter voltages, continuous collector current from 100 A to 200 A, and very low junction to case thermal resistance. UL-approved file E78996, the devices can be directly mounted to heatsinks and offer low EMI to reduce snubbing requirements.
|
Part # |
VCES |
IC |
VCE(ON) |
Eoff |
Speed |
Package |
|
@ IC and +125 °C |
||||||
|
VS-GT100TS065S |
650 V |
100 A |
1.02 V |
6.5 mJ |
DC to 1 kHz |
INT-A-PAK |
|
VS-GT150TS065S |
650 V |
150 A |
1.05 V |
10.3 mJ |
DC to 1 kHz |
INT-A-PAK |
|
VS-GT200TS065S |
650 V |
200 A |
1.07 V |
13.7 mJ |
DC to 1 kHz |
INT-A-PAK |
|
VS-GT100TS065N |
650 V |
100 A |
2.12 V |
1.0 mJ |
8 kHz to 30 kHz |
INT-A-PAK |
|
VS-GT200TS065N |
650 V |
200 A |
2.13 V |
3.86 mJ |
8 kHz to 30 kHz |
INT-A-PAK |
Samples and production quantities of the VS-GT100TS065S, VS-GT150TS065S, VS-GT200TS065S, VS-GT100TS065N, and VS-GT200TS065N IGBT power modules are available now, with lead times of 15 weeks.
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