Reduced losses from 100V shielded-gate trench MOSFET
The primary advantages of the new FDMS86181 are its 40% reduction in Rdson which lowers conduction losses and its minimised gate charge (Qg) which reduces switching losses. The exceptionally low Qrr of the FDMS86181 virtually eliminates the voltage overshoots that cause ringing, which allows for the reduction or elimination of snubbers in product designs and reduces EMI. This advantage of the FDMS86181 allows designers to both reduce product size and bill-of-materials (BOM) costs. for power supplies, motor drives and other applications requiring a 100V MOSFET.
“Our new 100V N-channel FET is a major advance over our previous, industry-leading generation of PowerTrench MOSFETs, and performs dramatically better than its competitors in virtually every performance category, from efficiency through reliability,” said Suman Narayan, Vice President and General Manager of Fairchild’s iFET business unit.
Fairchild; www.fairchild.com
If you enjoyed this article, you will like the following ones: don't miss them by subscribing to :
