Renesas develops split gate process for lower resistance 100V MOSFETs
Renesas Electronics has developed a process technology for high power 100V MOSFETs with a split gate that reduces the on-resistance between the drain and source by 30 percent to 1.5mΩ.
The REXFET-1 process is being used for a series of n-channel 340A, 100V MOSFETs for motor control, battery management systems, power management and charging in a wide range of applications from e-bikes, charging stations, power tools, data centres and uninterruptable power supplies (UPS).
The REXFET-1 process also gives the RBA300N10EANS and RBA300N10EHPF MOSFETs a 10 percent reduction in Qg characteristics (the amount of charge needed to apply voltage to a gate), and a 40 percent reduction in Qgd (the amount of charge that needs to be injected into the gate during the “Miller Plateau” phase).
The 100V MOSFETs are available in industry-standard TOLL and TOLG packages that are pin-compatible with devices from other manufacturers, and 50 percent smaller than traditional TO-263 packages. The TOLL package also offers wettable flanks for optical inspection.
“Renesas has been a leader in the MOSFET market for many years,” said Avi Kashyap, Vice President of Discrete Power Solutions BU at Renesas. “As we apply our manufacturing muscle to this market, we can provide customers with superior technical products, as well as assurance of supply from multiple high-volume facilities.”
Renesas has used the devices in a number of reference designs, including a 48V Mobility Platform and 3-in-1 Electric Vehicle Unit with Inverter, Onboard Charger, DC/DC Converter.
The RBA300N10EANS and RBA300N10EHPF MOSFETs are available in production volumes today. Renesas is also offering a reference design with application note to help customers shorten design cycles.
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