Renesas, TSMC put flash into 28nm MCUs
The non-volatile memory will be Renesas Metal-Oxide-Nitride-Oxide-Silicon (MONOS) technology and automotive MCUs based on the process are scheduled to sample in 2017 and go into mass production in 2020, Renesas said.
Renesas and TSMC have collaborated on automotive manufacturing process since the 90nm generation and started work on including MONOS in 40nm MCU platform in 2012.
With the 28nm eFlash process developed through cooperation Renesas expects to deliver MCUs with four times the memory capacity and four times the performance of the 40nm generation of MCUs. Other enhancements on the new MCUs include the use of multiple CPU cores, more advanced security, and support for multiple interface standards.
At 40nm Renesas the MONOS memory IP guarantees 20 years of data retention, and can be read from up to 170℃ junction temperature. Additionally, the code flash supports read speed of 120MHz, and the data flash supports up to 125,000 of program/erase cycles.
At 28nm the technology is expected to support a maximum on-chip memory capacity of more than 16Mbytes with 160MHz readout operating clock frequency, a data-retention time of 20 years, and rewrite cycle count of 250,000 cycles.
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