Both technologies will be offered for a 22nm FinFET manufacturing process, the reports said.
TSMC will be catching up with rivals Samsung and Globalfoundries who are offering eMRAM on 28nm CMOS and 22nm FDSOI processes, respectively, and then potentially leapfrog them with the ReRAM offering in 2019. Neither Samsung nor Globalfoundries has made any move to move to embedded ReRAM.
TSMC plans to enter so-called “risk production” of its eMRAM in chips in 2018 and of eReRAM in chips in 2019 using a 22nm manufacturing process the report is said to have referenced TSMC CTO Jack Sun as saying.
Samsung has already seen its 28nm eMRAM adopted by NXP Semiconductors (see Report: Samsung signs NXP as MRAM-on-FDSOI customer) and Globalfoundries’ 22FDX eMRAM is scheduled to be available for customer prototyping in 2017, with volume production in 2018 (see Globalfoundries offers embedded MRAM on 22nm FDSOI).
Details were not included in the reports of the exact form of ReRAM TSMC will offer but the company has published numerous papers on ReRAMs based on metal-oxide structures.
In particular TSMC has reported on how a hafnium-dioxide high-k dielectric material, which is used in the high-k metal gate (HKMG) of a 16nm FinFET, can also be used as a resistive memory device. Although the lead author on the IEDM 2015 paper came from Tsinghua University in Taiwan it was also attributed to multiple authors from TSMC (see Further details of FinFET ReRAM released).
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