Resistive RAM EEPROM improves IoT security
The Mavriq ‘DS’ (Digital Security) Series claims low-power operation, excellent endurance and features to enable better security in IoT and other connected devices. It performs read and write operations with 4x less power than competitive solutions, and, in ultra-deep power down mode, uses as much as 50x less power.
DS devices can automatically enter the ultra-deep power-down mode following write operations, reducing controller operations and overall system energy. The new products also provide users over 100,000 write cycle endurance across the full temperature and voltage range. Unlike EEPROMs based on floating gate technology, Adesto’s EEPROM products do not derate endurance across their temperature and voltage ranges or when using byte write operation.
The RRAM technology is termed Conductive Bridging RAM (CBRAM). Data is stored as the conductive stated of two-electrode cell. Changing the state of a bit is fast, and does not require a pre-erase step. Adesto says it is the first company to successfully commercialize a resistive RAM technology
Security features designed into Mavriq DS products help protect against data tampering, including two, 64 byte one-time programmable security registers. The two registers are located outside of the memory map, and for extra protection, can only be accessed through control codes.
One of the registers is dedicated for user programming, while the other is pre-programmed by Adesto with a unique identification number. Together, the two registers allow for the use of one-time programmed serial numbers for authentication and provide an additional means for device traceability.
The chip family family includes a range of four densities: 32 kbit, 64 kbit, 128 kbit, and 256 kbit.
Adesto Technologies; www.adestotech.com
