RF amplifier GaN transistors improve gain, thermal management and efficiency

RF amplifier GaN transistors improve gain, thermal management and efficiency

New Products |
By eeNews Europe

Two of the latest high-power GaN packaged transistors from TriQuint include the 200-W T1G4020036-FS/FL and the 285-W T1G2028536-FS/FL. Both devices offer high gain, which enables smaller RF amplifiers and reduced part-counts in many applications; both devices are widely exportable. The T1G2028536-FS/FL covers DC-2 GHz while the T1G4020036-FS/FL covers DC-3.3 GHz. Both devices are suitable for commercial and defence applications including professional communications, commercial and defense radars, avionics and RF test systems.

These GaN transistors are joined by GaN amplifiers and low-noise amplifiers that also deliver high efficiency and improved performance compared to competing products for wide-ranging commercial and defense applications. New GaN products include wideband LNAs covering 2-6 and 6-12 GHz with excellent gain. These amplifiers include a family of devices that focus on the needs of S-band radar.

Spatium replaces TWTAs

TriQuint recently acquired CAP Wireless and its Spatium RF power combining technology that replaces traveling wave tube amplifiers (TWTAs) in communications and defence systems. This technology builds on TriQuint’s position as a gallium nitride (GaN) pioneer and expands its expertise in high power RF solid-state amplifier systems. Spatium technology adds to the efficiency, bandwidth and ruggedness of TriQuint’s product portfolio. In high power RF applications, Spatium delivers superior broadband RF power efficiency through the use of patented coaxial spatial combining techniques. Spatium provides other performance advantages including solid-state reliability, smaller form factors, higher power densities and reduced weight compared to either TWTA-based systems or conventional planar power combining products.

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