RF energy toolkit aids design of GaN-on-Si-based RF systems
The toolkits enable engineers to make sue of of GaN-on-Si as a high-precision, high-efficiency energy source, overcoming the limitations of legacy magnetron power sources while achieving significantly higher efficiency than LDMOS-based systems, at comparable cost structures. With the Toolkit, designers are enabled to fine-tune RF energy output for any application requirements, with push-button ease and an intuitive display interface. OEMs designing for more complex RF energy applications can access custom applicator and algorithm development, plus expert engineering support.
Macom’s RF Energy Toolkits can scale power output up to 300W using the onboard Macom GaN-on-Si power transistor, and can be easily paralleled for higher power applications. The Toolkits support pulsed and continuous wave operation at the 2.45 GHz frequency band. Future Toolkits will support the 915 MHz frequency band.
“Commercial OEMs have awakened to the massive market opportunity for GaN-on-Si-based solid-state RF systems which essentially remove most of the limitations of magnetron based systems, but they’re new to this technology, and design and development challenges have slowed their time to market – until now,” said Mark Murphy, Senior Director, RF Power, at MACOM. “The RF Energy Toolkit affords them an all-in-one, adaptable ‘Swiss army knife’ solution that removes the engineering barriers that have impeded OEMs’ adoption of RF energy… on the path to mainstream commercialization.”
Macom; www.macom.com/rfenergy
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