RF gallium nitride device market on a 14% CAGR
The market is set to double over the next five years after a highly successful 2015 which saw the adoption of RF GaN in wireless infrastructure driven by adoption in LTE networks in China, the firm said. This equates to a compound annual growth rate of 14 percent over the period 2015 to 2020.
Originally developed for military applications RF GaN it is wireless infrastructure and defense markets that are now driving success The semiconductor technology is finding application in radar, communications basestation transceivers, cable television, VSAT satellite terminals and jamming systems.
The market will receive a significant boost around 2019 to 2020 with the deployment of 5G networks and the market situation is likely to be made more complex beyond 2020 by developments in GaN-on-Si and GaN-on-SiC, Yole said.
In future network designs, new technologies like carrier aggregation and massive MIMO will actually put GaN in a superior position compared to existing LDMOS . In 2016, new entrants like Infineon and possibly another LDMOS player will bring more uncertainty.
If you enjoyed this article, you will like the following ones: don't miss them by subscribing to :
