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RF power LDMOS transistors support the 700 MHz to 2700 MHz band with a single device

RF power LDMOS transistors support the 700 MHz to 2700 MHz band with a single device

New Products |
By eeNews Europe



The AFT27S006N delivers 6 W of peak power and is the next-generation follow-on to the popular MW6S004N product. Freescale is also adding a higher power device to this family, called the AFT27S010N, which delivers 10 W of peak power.

Both devices feature outstanding frequency range (700 MHz to 2700 MHz) and single-stage gain (20 dB to 24 dB), together with an ultra-small footprint package (PLD-1.5W) making them ideally suited for macro base station MIMO applications rated up to 40 W average power. Many competitive solutions require customers to deploy multiple RF devices to support this range, but the AFT27S006N and AFT27S010 support this cellular band range with a single power amplifier.

“These latest additions to Freescale’s Airfast device portfolio will continue the company’s synergistic approach to modern power amplifier design for wireless base stations,” said Lance Wilson, research director for ABI Research. “Additionally, these driver devices offer excellent performance, ease-of-use and a small footprint.”

The Airfast technology platform allows Freescale to improve performance in frequency, range and gain while addressing a host of other customer needs such as ease-of-use and flexibility. The broad frequency range of these new transistors means they can also be used as universal driver devices for a wide array of additional RF applications.

www.freescale.com/RFpower

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