Rohm teams for GaN TOLL packaging
Rohm has teamed up with a Chinese assembly and test provider on a 650V GaN HEMT power transistors in TOLL (TO-LeadLess) package.
Packaging is a key factor in reducing the on resistance and the thermal performance of power transistors, and as a result the TOLL package is increasingly being adopted in applications that require high power handling, particularly inside industrial equipment and automotive systems.
For the GNP2070TD-Z, Rohm teamed up with ATX Semiconductor (Weihai), an experienced OSAT (Outsourced Semiconductor Assembly and Test) provider. This uses the second generation GaN technology produced through a deal with at TSMC to provide a figure of merit (RDS(on) x Q(oss)) of 2.90, half that of other devices.
Rohm began mass production of its first generation of its 650V GaN HEMTs in April 2023, followed by the release of power stage ICs that combine a gate driver and 650V GaN HEMT in a single package all developed in-house.
In response to the increasing adoption of GaN devices in the automotive sector, which is expected to accelerate in 2026, Rohm plans to ensure the rapid introduction of automotive-grade GaN devices by strengthening these partnerships in addition to advancing its own development efforts.
“We are extremely pleased to have been entrusted with production by Rohm,” said Liao Hongchang, Director and General Manager at ATX. “We began technical exchanges with ROHM in 2017 and are currently exploring possibilities for deeper collaboration. This partnership was made possible due to ATX’s track record and technical expertise in the back-end manufacturing of GaN devices. Looking ahead, we also plan to collaborate on Rohm’s ongoing development of automotive-grade GaN devices.”
“Collaborating with OSATs such as ATX, that possess advanced technical capabilities, allows us to stay ahead in the rapidly growing GaN market while utilizing Rohm’s strengths to bring innovative devices to market,” said Satoshi Fujitani, General Manager, AP Production Headquarters at Rohm.
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