Rugged silicon carbide modules tuned for size, reliability

Rugged silicon carbide modules tuned for size, reliability

Technology News |
By Graham Prophet

Within this partnership, BTTC will develop high reliability and high temperature transformer modules, embedding both power and pulse transformers, optimized for Cissoid HADES2 Isolated Gate Driver. This solution will be used in SiC MOSFET Intelligent Power Modules (IPM) developed by Cissoid, making them more compact and reliable. It will address SiC IPMs developed for high power density applications but also IPMs in hermetically sealed packages currently in development for harsh environments, e.g. unpressurized locations and/or extreme temperatures.


Firstly, transformers modules are being developed, validated and qualified for temperature ranges from -55°C and up to +225°C. Magnetic cores and other transformer materials have been carefully selected to offer a stable behaviour and a reliable operation within this range. The transformers will provide isolation in excess of 2500 Vdc and are optimized for very low parasitic capacitances in order to support high dV/dt, typically up to 50 kV/µsec, common with fast switching SiC transistors. These transformers have been optimized to work with the HADES2 Isolated Gate Driver chipset: the power transformer is used inside a flyback DC-DC converter supplying both low- and high-side isolated gate drivers while pulse transformers are transmitting PWM and faults signals.







If you enjoyed this article, you will like the following ones: don't miss them by subscribing to :    eeNews on Google News


Linked Articles