Samsung has achieved a sharp increase in production yield on its 3nm manufacturing process, according to the Korea Economic Daily, citing to an unnamed source.
Samsung’s gate-all-around (GAA) 3nm process, known as 3GAE, was introduced about six months ago. Samsung was ahead of rival foundry TSMC but at the time yields were reported to be low at 10 to 20 percent.
TSMC recently announced it was manufacturing its N3 3nm process, which uses a more conventional FinFET structure, saying it was already at 60 to 80 percent yield (see TSMC catches Samsung, starts 3nm chip production).
The Korea Economic Daily‘s source is quoted saying that Samsung’s 3nm node has now reached “a perfect level” of production yield. While perfect ought to mean 100 percent it seems more likely that the source meant Samsung has achieved typically high yield, suitable for economic production, such as 80 percent.
“We are now developing second-generation 3nm chips without delay,” the source is quoted saying.