Samsung develops industry’s first GDDR7 DRAM
Samsung Electronics has completed development of the industry’s first Graphics Double Data Rate 7 (GDDR7) DRAM.
The 16Gbit GDDR7 chip has a speed per pin of up to 32Gbit/s giving a bandwidth of 1.5 Tbyte/s, 1.4 times that of GDDR6. This comes from Pulse-Amplitude Modulation (PAM3) signalling method adopted for the new memory standard instead of the Non-Return-to-Zero (NRZ) from previous generations. PAM3 allows 50-percent more data to be transmitted than NRZ within the same signalling cycle.
The chip will first be installed in next-generation systems of key customers for verification this year for graphics applications with 20% better energy efficiency with a low operating voltage option.
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To minimize heat generation, an epoxy molding compound (EMC) with high thermal conductivity is used for the packaging material in addition to IC architecture optimization. These improvements dramatically reduce thermal resistance by 70-percent in comparison to GDDR6, aiding in stable product performance even in conditions with high-speed operations.
“Our GDDR7 DRAM will help elevate user experiences in areas that require outstanding graphic performance, such as workstations, PCs and game consoles, and is expected to expand into future applications such as AI, high-performance computing (HPC) and automotive vehicles,” said Yongcheol Bae, Executive Vice President of Memory Product Planning Team at Samsung Electronics. “The next-generation graphics DRAM will be brought to market in line with industry demand and we plan on continuing our leadership in the space.”
This follows the development of the industry’s first 24Gbps GDDR6 DRAM last year
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