Samsung Foundry aims for 1.4nm process in 2027
Samsung Electronics is planning to introduce a 1.4nm process technology in mass production in 2027.
The company has already taped out multiple chips on the second generation 3nm process technology using the new Gate All Around (GAA) transistor design. It plans to triple its capacity for leading edge processes by that time.
Samsung is planning to introduce a GAA 2nm process in 2025 and 1.4nm process in 2027.
TSMC is planning 3nm FinFET production later this year, with 2nm GAA production in 2024. Intel is planning its 20A 2nm process for mid-2024 with GAA RibbonFET transistors. Research is ongoing to modify the RibbonFET structures for the 18A (1.8nm) process in mid-2025 using the high NA lithography systems that have just been delivered by ASML in the Netherlands.
- Intel charts path to 1nm – video
- TSMC looks to 2nm in 2024
- imec, ASML detail high-NA EUV lithography
“The technology development goal down to 1.4nm and foundry platforms specialized for each application, together with stable supply through consistent investment are all part of Samsung’s strategies to secure customers’ trust and support their success,” said Dr. Si-young Choi, president and head of the Foundry Business at Samsung Electronics.
The significant market growth in high-performance computing (HPC), artificial intelligence (AI), 5/6G connectivity and automotive applications is driving demand for higher performance chips built on more advanced processes.
This is also driving the development of 2.5D/3D chiplet packaging technology to provide a total system in its foundry services. This will see its 3D packaging X-Cube with micro-bump interconnection ready for mass production in 2024, and bump-less X-Cube will be available in 2026.
For automotive customers specifically, Samsung is currently providing embedded non-volatile memory (eNVM) solutions based on 28nm technology. In order to support automotive-grade reliability, the company plans to further expand process nodes by launching 14nm eNVM solutions in 2024 and adding 8nm eNVM in the future. Samsung has been mass producing 8nm RF following 14nm RF, and 5nm RF is currently in development.
Including the new fab under construction in Taylor, Texas, Samsung’s foundry manufacturing lines are currently in five locations: Giheung, Hwaseong, and Pyeongtaek in Korea; and Austin and Taylor in the United States.
Given the downturn facing the semiconductor industry, Samsung is taking a ‘Shell-First’ strategy for capacity investment, building the plants and cleanrooms first irrespective of market conditions. With cleanrooms readily available, fab equipment can be installed later and set up flexibly as needed in line with future demand.
As of 2022, Samsung provides more than 4,000 IP blocks with 56 partners, and is also cooperating with nine and 22 partners in the design solution and EDA, respectively. It also offers cloud services with nine partners and packaging services with 10 partners.
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