Samsung mass-producing high-performance 128-Gbit 3-bit multi-level-cell NAND flash
Samsung views the chip as a critical product in the evolution of NAND flash, one whose timely production will enable it to increase its competitiveness in the high-density memory storage market. Samsung’s 128 Gb NAND flash is based on a 3bit multi-level-cell design and 10nm-class process technology. It claims the industry’s highest density as well as the highest performance level of 400 bps data transfer rate based on the toggle DDR 2.0 interface.
Using 128 Gb NAND flash memory, Samsung will expand its supply of 128-gigabyte (GB) memory cards; Samsung will also increase its production volume of SSDs with densities over 500 Gs for wider adoption of SSDs in computer systems, while leading the transition of main storage drives in the notebook market from hard disc drives (HDDs) to SSDs.
Demand for high-performance 3-bit MLC NAND flash and 128 Gb high storage capacities has been rapidly increasing, driving the adoption of SSDs with more than 250 GB data storage, led by the Samsung SSD 840 Series.
Samsung started production of 10nm-class 64 Gbit MLC NAND flash memory in November last year. The new 128-Gb chip also extends Samsung’s 3-bit NAND memory line-up along with the 20nm-class 64-Gb 3-bit NAND flash chip that Samsung introduced in 2010. The new 128-Gb 3-bit MLC NAND chip offers more than twice the productivity of a 20nm-class 64-Gb MLC NAND chip.
Samsung has said that it plans to keep introducing leading-edge SSDs and embedded memory storage solutions with high-quality features, in accelerating the growth of the premium memory market.
Terminology note; “10nm-class” means a process technology node somewhere between 10 and 20 nanometers and “20nm-class” means a process technology node somewhere between 20 and 30 nanometers.
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