Samsung moves to 12nm for DDR5 DRAM memory chips
Samsung Electronics has developed a 16Gbit DDR5 DRAM memory chip using the industry’s first 12nm process technology
The DDR5 memories use a new high-κ material that increases cell capacitance and proprietary designs to improve circuit characteristics. This is combined with multi-layer extreme ultraviolet (EUV) lithography that was used for the 14nm generation devices last year to give a 20 percent gain in wafer productivity and reduce the cost per bit.
Samsung has also completed product evaluation for compatibility with AMD for data centre and AI boards and systems with data rates up to 7.2Gbit/s.
- Samsung boosts DDR5 modules with integrated PMIC design
- Integrated DDR5 PMICs reduce memory module footprint
- Samsung starts mass production of 14nm EUV DDR5 DRAM
“Our 12nm-range DRAM will be a key enabler in driving market-wide adoption of DDR5 DRAM,” said Jooyoung Lee, Executive Vice President of DRAM Product & Technology at Samsung Electronics. “With exceptional performance and power efficiency, we expect our new DRAM to serve as the foundation for more sustainable operations in areas such as next-generation computing, data centres and AI-driven systems.”
“Innovation often requires close collaboration with industry partners to push the bounds of technology,” said Joe Macri, Senior VP, Corporate Fellow and Client, Compute and Graphics CTO at AMD. “We are thrilled to once again collaborate with Samsung, particularly on introducing DDR5 memory products that are optimized and validated on ‘Zen’ platforms.”
The higher density process technology also reduces the power consumption by 23 percent to help equipment stay within the rack power envelopes in the data centre.
- Samsung boosts AI in-memory processing with CXL
- Samsung plans to ‘double-stack’ 3D-NAND flash memory
Samsung plans to start mass production in 2023 and move other memory devices to the 12nm process.
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