Samsung offers 64Gbit MLC NAND Flash using Toggle DDR 2.0 interface
Equipped with a toggle DDR (Double Data Rate) 2.0 interface, the new 64Gbit MLC chip can transmit data at a bandwidth of up to 400Mbit/s, which provides a 10-fold increase over the 40Mbit/s Single Data Rate (SDR) NAND flash memory in widespread use today, and a three-fold boost over 133Mbit/s toggle DDR 1.0, 32Gbit NAND flash memory, which Samsung was first to produce in 2009.
The high-speed 400Mbit/s bandwidth of toggle DDR 2.0 is expected to better support the ongoing shift toward advanced interfaces, as more mobile and consumer electronics devices requiring added performance and higher densities adopt new interfaces such as USB 3.0 and SATA 6.0Gbit/s.
The new chip offers an approximate 50-percent increase in productivity over 20nm-class 32Gbit MLC NAND chips with a toggle DDR 1.0 interface (which Samsung started producing in April last year) and more than doubles the productivity of 30nm-class 32Gbit MLC NAND.
According to IHS iSuppli, the worldwide NAND flash memory market will continue to steadily grow from approximately 11 billion 1GByte equivalent units in 2010 to 94 billion 1GByte equivalent units in 2015 with a CAGR of 54 percent. In addition, shipments of NAND flash memory with 64Gbit or higher density are expected to account for approximately 70 percent of total NAND flash memory shipments in 2012, a huge increase from the three percent level in 2010.
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