Samsung starts production of UFS 3.1 flash memory

Samsung starts production of UFS 3.1 flash memory

New Products |
By Nick Flaherty

Samsung Electronics has started mass production of its Universal Flash Storage (UFS) 3.1 memory chips for in-vehicle infotainment (IVI) systems.

The UFS3.1 chips cut energy consumption by 33% with 128, 256 and 512 GigaByte variants. The enhanced lineup allows more efficient battery life management to future automotive applications such as electric or autonomous vehicles.

The 256GB model, for instance, has reduced its energy consumption by about 33-percent compared to its previous generation product. The 256GB model also provides a sequential write speed of 700-megabytes-per-second (MB/s) and a sequential read speed of 2,000MB/s.

“Samsung’s UFS 3.1 solution addresses a wide range of customer needs for optimized IVI systems while pushing forward with next-generation memory trends that require higher ESG standards,” said Hyunduk Cho, vice president of Memory Product Planning Team at Samsung Electronics.

“We aim to expand our presence in the automotive semiconductor market, following the introduction of our UFS 3.1 solution for advanced driver assistance systems (ADAS).”

The devices meet AEC-Q100 Grade2 with operation across wide range of temperatures from -40°C to 105°C. Samsung plans to supply its UFS 3.1 products to global automakers and part manufacturers by the end of this year.

Since the introduction of UFS for vehicles for the first time in the industry in 2017, Samsung has been providing various memory solutions such as AutoSSD, Auto LPDDR5X and Auto GDDR6.



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