
The new eFlash is designed using AmgnaChip’s cost-competitive hybrid process. The second generation 0.13 micron eFlash. The new process uses 7 fewer process steps in comparison to the first generation 0.13 micron eFlash. It also provides various customized IPs up to 64Kbytes. The addition of the high voltage option doesn’t affect the ability of the eFlash to match the original eFlash characteristics.
Customers can select either 20V or 30V and have the option to choose IPs such as SRAM, PLL analogue IPs, high density standard cell libraries and high voltage IO libraries. The hybrid process provides fully isolated high-voltage capability for the output driver to handle negative voltage, thereby allowing higher design flexibility.
MagnaChip’s hybrid process uses high-voltage devices that have already been verified in DDI (Display Driver IC) technology and minimises the high-voltage area in chips through more optimized design rules and enhanced current performance. High-voltage capability is important for products needing high-voltage output drivers and those requiring high SNR (signal to noise ratio). For instance, touch ICs in tablets and notebooks mainly use 20V and monitors use 30V.
The next version of the hybrid embedded eFlash process will extend the voltage capability to 40V. MagnaChip is also developing e-Flash with 120V BCD process to continue to pioneer new markets. These technologies have the potential for broad applications including wireless power chargers, USB type-C PDs, motor driver ICs and BLU driver ICs.
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