
SemiQ launches 1200V SOT-227 SiC module family
SemiQ has launched a family of 1200V MOSFETs that pairs with or without 1200V SiC Schottky Diodes in a SOT-227 package.
The QSiC modules have a breakdown voltage over 1400 V, high-temperature operation with a Tj = 175 °C and low Rds(On) shift over the full operating temperature range. They also have industry-leading gate oxide stability and gate oxide lifetime, avalanche (UIS) ruggedness, and extended short-circuit withstand times.
- The greening of Infineon
- Industry’s first 2200V Dual SiC MOSFET module
- Navitas enters high power SiC module market
Target markets for the QSiC modules with the existing SOT-227 SiC SBD modules include EV charging, on-board chargers (OBCs), DC-DC converters, E-compressors, fuel cell converters, medical power supplies, energy storage systems, solar and wind energy systems, data centre power supplies, UPS/PFC circuits, and other automotive and industrial power applications.
All of the QSiC modules are tested at wafer-level gate burn-in to provide high-quality gate oxide with stable gate threshold voltage. Besides the burn-in test, which helps to stabilize the extrinsic failure rate, stress tests such as gate stress, high-temperature reverse bias (HTRB) drain stress, and high humidity, high voltage, high temperature (H3TRB) to ensure requisite industrial grade quality levels.
“We are delighted with the customer input and needs for our new family of QSiC high-power modules and thank our SemiQ team who have worked tirelessly to build and qualify our latest QSiC modules,” said Dr Timothy Han, President at SemiQ.
The 1200V SOT-227 modules are available in 20mΩ, 40mΩ, 80mΩ SiC MOSFET categories.
Part Numbers |
Circuit Configuration |
Ratings, Packages |
Rds(on), mΩ |
GCMX020B120S1-E1 |
Single MOSFET w/o SBD |
1200V/113A, SOT-227 |
20 |
GCMS020B120S1-E1 |
Single MOSFET w SBD |
1200V/113A, SOT-227 |
20 |
GCMX040B120S1-E1 |
Single MOSFET w/o SBD |
1200V/57A, SOT-227 |
40 |
GCMS040B120S1-E1 |
Single MOSFET w SBD |
1200V/57A, SOT-227 |
40 |
GCMX080B120S1-E1 |
Single MOSFET w/o SBD |
1200V/30A, SOT-227 |
80 |
GCMS080B120S1-E1 |
Single MOSFET w SBD |
1200V/30A, SOT-227 |
80 |
