SemiSouth introduces the industry’s lowest resistance SiC power transistor for efficient power management
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By
eeNews Europe
The record-low, maximum on-state resistance (RDS(on)max of only 0.045 Ω is achieved with a relatively small die area, resulting in low gate charge and intrinsic capacitance for efficient, low-loss, high-frequency operation.
Featuring a positive temperature coefficient for ease of paralleling, the new SJDP120R045 JFETs also offer extremely fast switching with no ‘tail’ current – even up to its high 175 degC maximum operating temperature in a TO-247 package. The product is also available in bare die form (SJDC120R045) for module partners. Being voltage-controlled, there are a number of easy gate drive schemes possible for the JFET, with complete reference designs and application notes available.
Visit SemiSouth at www.semisouth.com.
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