Shielded SMD inductor boosts GaN power designs

Shielded SMD inductor boosts GaN power designs

New Products |
By Nick Flaherty

TT Electronics has launched two shielded surface mount device (SMD) power inductor families to support fast gallium nitride (GaN) switching transistors and DC-DC converters.

The HM66M series is aimed at high frequency power conversion systems and EMI filter designs in industrial and telecommunications markets, while the HM78M series is intended for high density and high frequency DC-DC converter applications.

The HM66M is a shielded, miniature low-profile SMD inductor that integrates a ferrite material core for significant permeability and temperature advantages. The low losses at high frequencies mean the inductor family will work well with fast GaN FETs running between 700 kHz and 4 MHz, and it has an operating temperatures at 125°C. The family is packaged in three standard case sizes: 60, 70 and 84.

In contrast the HM78M series power inductors are shielded, ferrite-based SMD inductors designed for use in high frequency DC-DC converter configuration popular in industrial markets. This family works with switches operating from 100 kHz to 3 MHz, making it suitable as a buck converter or an EMI filter, and it comes in two standard package sizes: 10 and 20.

Semi-custom designs of both the HM66M and HM78M are also available to meet special requests.

“TT’s new SMD inductors offer greater operating temperature ranges in a smaller package than competitive options,” said Raj Singaraju, Global Product Line Director, TT Electronics. “Designers now have a clear advantage in addressing the complex needs of high power density applications common in today’s industrial and telecom equipment markets.”

Related SMD inductor articles 

If you enjoyed this article, you will like the following ones: don't miss them by subscribing to :    eeNews on Google News


Linked Articles