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SiC JFET delivers high speed switching in micro inverters

SiC JFET delivers high speed switching in micro inverters

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By eeNews Europe



Rated at 1200 V with a maximum on-state resistance of 340 mΩ (typical RDS,on of 270 mΩ), these new devices feature a positive temperature coefficient for ease of paralleling and fast switching with no tail current at 150°C. Key applications include photovoltaic microinverters, SMPS and UPS, motor drives, and induction heating.

Visit SemiSouth Laboratories at www.semisouth.com

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