SiC MOSFET for compact 800V EV drives
StarPower Europe has launched three half-bridge modules using SiC MOSFET technology in the drivetrain of electric vehicles (EVs).
The SiC MOSFET modules from StarPower have a low on-resistance combined with a high reverse voltage of 1200 V.
Using 1200V SiC MOSFET devices for the half-bridge modules enables the development of particularly compact and efficient drive controllers with high power density in 800V designs.
The MD19HFC120N6HT, MD22HFC120N6HY and MD29HFC120N6HT range from 1.8 mΩ to 2.82 mΩ depending on the type and all the models can be easily connected in parallel to increase the current. Driving these MOSFETs does not require any complex measures.
These MOSFETS are supplied in a 2-in-1 housing. This is optimized for low parasitic inductance in order to suppress unwanted oscillation tendencies. Heat loss is dissipated via a solid copper base plate with PINFIN structures for optimum cooling and a high strength ceramic material silicon nitride (Si3N4) is used as the carrier substrate, employing the AMB (Active Metal Brazing) process.
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