SiC Schottky barrier diodes claim market leading efficiency
Infineon’s proprietary diffusion soldering process, already introduced with Generation 3, is now combined with a new, more compact design as well as latest advancements in thin wafer technology bringing improved thermal characteristics and a Figure of Merit (Qc x Vf) in the order of 30% lower with respect to the preceding Infineon SiC diode families.
The result is a series of products delivering improved efficiency in PFC and Boost stages over all load conditions with respect to all previous thinQ! generations. The Generation 5 products are targeted for use in high-end Server and Telecom SMPS, PC Silverbox and Lighting applications, Solar Inverters and UPS systems. With the new generation, these applications not only benefit from improved efficiency, but also from reduced EMI, increased system reliability and cost/size savings due to reduced cooling requirements.
The low capacitive charge (Qc) values of Generation 3 combined with the forward voltage (Vf) levels of Generation 2 allow Generation 5 to deliver utmost efficiency levels in PFC circuits. The new family has a higher breakdown voltage level: 650 V instead of the 600 V of Generation 2 and 3, matching the latest releases in CoolMOS technology. The feature provides higher safety margins in applications like Solar Inverters and in challenging SMPS environments. Generation 5 offers moreover a high robustness against surge currents and a broader portfolio including products with both higher current ratings and new packages, such as TO-247 and ThinPAK.
Samples are available now.
More information about the 650V thinQ! SiC Schottky Barrier Diodes Generation 5 at www.infineon.com/sic-gen5