SiCrystal aims to triple SiC wafer ouput, adds production space

SiCrystal aims to triple SiC wafer ouput, adds production space

Business news |
By Jean-Pierre Joosting

SiCrystal GmbH, a ROHM group company, is taking an important step towards strengthening the semiconductor industry and promoting sustainable technologies, by creating new, additional silicon carbide (SiC) wafer production space in the north-east of Nuremberg, directly opposite its existing site.

The new building will offer an additional 6,000 square meters of production space and will be equipped with state-of-the-art technology to further optimize the production of SiC wafers. The close proximity to the existing plant will ensure close integration of the production processes. Total production capacity, including the existing building, will be approximately three times higher in 2027 than in 2024.

The construction work is scheduled to be completed by the beginning of 2026. And will create new jobs in the region.

SiC wafers from SiCrystal, a subsidiary of the Japanese ROHM Group, are of crucial importance for the production of high-performance semiconductor components. By using SiC, we can achieve higher efficiency, lower energy consumption and improved performance in various applications such as electric vehicles, solar energy, and industrial equipment.

“The new space will significantly increase the production capacity for SiC substrates,” says Dr. Robert Eckstein, CEO of SiCrystal.

“This marks an important milestone for SiCrystal. In this way, we can continue to supply innovative products of the highest quality for our customers in the future and make a positive contribution to global sustainability,” said Dr. Erwin Schmitt, COO of SiCrystal. “With the additional production capacities, we will strengthen our market position and make an important contribution to technological development in the semiconductor industry.”

SiCrystal is one of the global market leaders for monocrystalline SiC semiconductor wafers. The company’s highly specialized products form the basis for the manufacture of innovative electronic components worldwide in areas such as electromobility or green technologies such as photovoltaics and wind power.

Image: Ground-breaking ceremony at SiCrystal for new building to expand the production area for SiC substrates. From left: Jürgen Voit and Daniel Polzin (Systeambau GmbH), Volker Petersik and Dr. Robert Eckstein (SiCrystal GmbH), Dr. Andrea Heilmaier (Economic Officer), Mayor Marcus König, Takashi Shimane and Dr. Erwin Schmitt (SiCrystal GmbH), Harald Lötsch (Systeambau GmbH).

If you enjoyed this article, you will like the following ones: don't miss them by subscribing to :    eeNews on Google News


Linked Articles