SiCrystal to triple SiC wafer production in Europe
SiCrystal has broken ground on an expansion of its plant in Germany to triple production of silicon carbide wafers.
SiCrystal, a Rohm subsidiary, is adding space in the north-east of Nuremberg, directly opposite the existing site, for SiC wafer production. The new building will offer an additional 6,000 square meters of production space and will be equipped with state-of-the-art technology to further optimize the production of silicon carbide wafers.
SiCrystal’s total production capacity, including the existing building, will be approximately three times higher in 2027 than in 2024. The construction work is scheduled to be completed by the beginning of 2026.
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The company is one of the global market leaders for monocrystalline SiC wafers used for the production of high power diodes and MOSFETs for electric vehicles, photovoltaics and wind power to European chip makers such as STMicroelectronics
“The new space will significantly increase the production capacity for SiC substrates and we are proud that we were able to welcome Mayor König to the ground-breaking ceremony,” says Dr. Robert Eckstein, CEO of SiCrystal.
“This groundbreaking ceremony marks an important milestone for SiCrystal and underlines our commitment to the metropolitan region. In this way, we can continue to supply innovative products of the highest quality for our customers in the future and make a positive contribution to global sustainability,” said Dr. Erwin Schmitt, COO of SiCrystal. “With the additional production capacities, we will strengthen our market position and make an important contribution to technological development in the semiconductor industry.”
www.sicrystal.de
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