SiGe rectifiers combine the best of Schottky and fast recovery diodes
Design engineers using these extremely low leakage devices can rely on an extended safe-operating area with no thermal runaway up to 175°C. At the same time, they can optimize their design for higher efficiency which is not feasible using fast recovery diodes commonly used in such high-temperature designs. By boosting a low forward voltage (Vf) and low Qrr, the SiGe rectifiers have an advantage of 10-20 % lower conduction losses, Nexperia advertises.
The PMEG SiGe devices (PMEGxGxELR/P) are housed in size- and thermally-efficient CFP3 and CFP5 packages that have become the industry standard for power diodes. By featuring a solid copper clip the packages’ thermal resistance is reduced and transfer of heat into the ambient environment is optimized, allowing compact PCB designs. Moreover, simple pin-to-pin replacements of Schottky and fast recovery diodes are possible when switching to SiGe technology.
The first four AEC-Q101-qualified 120 V SiGe rectifier types are already in volume production. A further eight 150 V and 200 V devices are sampling now.
More information: www.nexperia.com/sige-rectifiers
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