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Silicon carbide 1.2kV, 120A half-bridge module for 30-60 kW power conversion

Silicon carbide 1.2kV, 120A half-bridge module for 30-60 kW power conversion

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By eeNews Europe



Built with Cree’s C2M MOSFET technology, the CAS120M12BM2 module offers 2.1 mJ of total switching losses, a figure that is 14x lower than similarly rated IGBT4 modules. Positioned as a lower priced alternative to the existing CAS100H12AM1 module, the CAS120M12BM2 allows easy design-in due to its industry standard 62 mm package and the simple drive requirements of the C2M MOSFETs. Cree says that this module represents a new price/performance point for SiC technology, enabling simpler, lower cost systems with higher efficiency and reliability in applications such as induction heating, battery chargers, DC/DC converters, solar inverters, and line regenerative motor drives.

Cree; www.cree.com

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