Silicon Carbide FET series boosts speeds and efficiency 

Silicon Carbide FET series boosts speeds and efficiency 

New Products |
By Nick Flaherty

The UF3C FAST series offers increased switching speeds and higher efficiency levels than the existing UJC3 Series.

The devices are based on UnitedSiC’s proprietary cascode co-packaged configuration that provides a ‘drop-in’ replacement for most TO-247-3L IGBT, Si-MOSFET and SiC-MOSFET parts. This means system upgrades for greater performance and efficiency can be affected without requiring changes to the existing gate drive circuitry. Turn-on losses can be reduced based on a 50 percent reduction in Qrr. For high current use, a small, low-cost RC snubber is required, which also simplifies EMI design. 

Applications suitable for use with the UF3C FAST series include the full range of hard switched circuits such as active rectifiers and totem-pole PFC stages, commonly used in EV charging, telecom rectifiers and server supplies.

A faster SiC JFET combined with a custom-designed Si-MOSFET combine normally-OFF operation, a high-performance body diode and easy gate drive of the MOSFET. Compared with other wide band-gap technologies, the SiC cascode devices support standard 12 V gate drive, and have assured avalanche ratings (100 percent production-tested).

“UnitedSiC’s new FAST SiC FET range is simple to use and offer a great cost-performance option,” said Anup Bhalla, VP Engineering at UnitedSiC. “The range offers design engineers the opportunity to extract even higher levels of efficiency from high-power designs.” 

The range includes the UF3C120040K3S (1200 V / 35 mΩ), UF3C065030K3S (650 V / 30 mΩ) and UF3C065040K3S (650 V / 42 mΩ). 
Data sheets and a SiC FET user guide are available at, which include recommended RC snubber values tested by UnitedSiC for optimal performance.

Prices range from $14.50 for the UF3C065040K3S to $24.50 for the UF3C120040K3S at 1,000-piece quantities.

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