Silicon MOSFET cuts footprint by a third with lowest RDS(on)

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By Nick Flaherty

Reducing the on-resistance of a silicon MOSFET while reducing the footprint is a signficant challenge for designers of portable and wearable systems. 

Nexperia has launched a 20V and 30V MOSFET range in an ultra-small DFN0606 package for these mobile applications with an on-resistance, RDS(on), of 470mΩ.

The PMH MOSFET family of N and P devices is housed in a  DFN0606 package with a footprint of 0.62 x 0.62 mm but it keeps the industry standard pitchof 0.35mm for easy PCB assembly. This gives a space-saving of 36 per cent compared to previous-generation DFN1006 parts.

Using the latest process technology reduces the RDS(on) by 60 per cent and provides a VGS low voltage threshold down to 0.7 V for portable applications with low drive voltage. At he same time the ESD protection is 2kV.

“The latest generation of wearables continues to push boundaries in consumer technology. The evolution of smart-phones, smart-watches, fitness trackers and other innovations requires miniaturized MOSFETs that provide leading performance and efficiency for an ever-growing list of complex functions. Nexperia has a high-volume production capacity for these devices and the manufacturing footprint to upscale for the most demanding of markets,” said Sandy Wang, Nexperia’s product manager.

Along with the PMH family, Nexperia is also releasing the NX7002BK in the DFN0606 package. The 60 V, N-channel Trench MOSFET in the smaller package gives designers the option to choose the same performance in a wide range of footprints and package styles. These include the leaded SOT23, SOT323 and SOT363 to the discrete, flat, no-leads DFN1010, DFN1006 and now DFN0606.

Nine PMH MOSFET devices in the new DFN0606 package are available now.

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