MRAM is a non-volatile memory technology with the potential to become a dominant alternative to DRAM and SRAM, and the future possibility to become a universal memory for digital devices. MRAM has the operation speed close to SRAM while using lower power and less area for an equivalent memory density.
No information was given about the funding or staffing of the laboratory or what its deliverables would be over what period.
“MRAM has the potential to deliver both more memory density and much lower power consumption extending memory beyond the current solutions. TCAD device simulation of this new device technology is an essential step in making this change possible for the industry,” said Viktor Sverdlov, who heads the new Christian Doppler Laboratory, in a statement.
“TCAD simulation always plays a significant role launching, supporting and optimizing new technologies and this is also true for novel memories such as MRAM,” said Eric Guichard, general manager of the TCAD division at Silvaco, in the same statement.
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