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Single channel gate driver supports both MOSFETs and GaN devices

Single channel gate driver supports both MOSFETs and GaN devices

New Products |
By Nick Flaherty



The pin outs of the 1EDN EiceDRIVER family are fully compatible to the industry standard which eases the drop-in replacement for existing designs. It is aimed at applications such as telecom and industrial SMPS, DC-DC converters, PFC in electrical vehicle charging stations as well as industrial applications such as AC power tools, UPS, air conditioning and fans. The new family also supports wireless charging applications. 

Low-ohmic output stages translate into a higher efficiency of more than 30 percent, allowing for additional design flexibility and driving more power devices whilst staying within the thermal budget. 

The reverse current output of 5A eliminates the need for protection diodes when driving MOSFETs with large parasitic source inductances typically found in TO-220 or TO-247 packages. With the new driver ICs designers can save on both, BoM and PCB area. 

The 1EDN provides a -10 V input robustness securing a crucial safety margin against ground-shifts when driving gate-transformers. This extra noise robustness protects against electrical overstress of the inputs or latch-up of the driver IC. Additionally, the 1EDN family includes variants with separate source and sink output terminals. This eases the turn-on and turn-off speed optimization, concurrently saving one external diode.

The 1EDN EiceDRIVER family is in volume production. 

More information is available at www.infineon.com/1edn

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