Single chip GaN half bridge converts 12V to 1.8V at 5MHz
The design increases the efficiency of overall point-of-load system applications over 85% at 14 A when switching at 5 MHz and over 80% when switching at 10 MHz and converting from 12 V to 1.8 V. The higher frequency operation allows smaller inductors to be used, reducing the profile of the power converter and the thickness of laptops and tablet computers.
Combining two 30 V enhancement-mode monolithic GaN transistors in a single device reduces interconnect inductances and eliminates the interstitial space needed on a PCB for a half bridge design. This increases efficiency, especially at higher frequencies, and the power density, while reducing assembly costs to the end user’s power conversion system.
Each device within the EPC2111 half-bridge component has a voltage rating of 30 V. The upper FET has a typical RDS(on) of 14 mΩ, and the lower FET has a typical RDS(on) of 6 mΩ. The EPC2111 comes in a chip-scale package for improved switching speed and thermal performance, and is only 3.5 mm x 1.5 mm for increased power density.
A primary application for this device is for notebook and tablet computing. The power conversion circuitry in these systems occupy nearly half of the space and define the height of the motherboard. The high frequency capability of GaN reduces the size required for power conversion and thus will drive significant size reductions of next generation mobile computing.
The EPC2111 monolithic half-bridge price is priced at $1.62 each in 1K units.
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