Single GaN switches and half-bridges with integrated drivers
Infineon Technologies has expanded its CoolGaN Drive family with switches and half-bridges with integrated drivers
The Infineon CoolGaN Drive 700 V G5 single switches integrate one transistor with a gate driver in PQFN 5×6 and PQFN 6×8 packages, while the CoolGaN Drive HB 600 V G5 devices combine two transistors with integrated high- and low-side gate drivers in a LGA 6×8 package.
The integrated devices improve efficiency, reduce system size and enable overall cost savings. This makes the devices suitable for longer-range e-bikes, portable power tools, and lighter-weight household appliances such as vacuums, fans, and hairdryers.
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“For several years, Infineon has been focused on accelerating innovation in GaN to provide targeted solutions for real-world power challenges”, said Johannes Schoiswohl, Senior Vice President & General Manager, GaN Systems Business Line Head at Infineon. “The new CoolGaN Drive product family is another proof point of how we support our customers in developing compact designs with high power density and efficiency through GaN.”
The devices are based on the recent 650V G5 CoolGaN transistors. Depending on the product group, the components feature a bootstrap diode and are characterized by loss-free current measurement, and adjustable switch-on and switch-off dV/dt.
They also provide OCP/OTP/SCP protection functions. As a result, the devices enable higher switching frequencies, leading to smaller and more efficient system solutions with high power density. At the same time, the bill of materials (BoM) is reduced. This not only results in a lower system weight, but also reduces the carbon footprint.
Samples of the half-bridge solutions are available now. Single-switch samples will be available starting Q4 2024.
www.infineon.com/GaN-innovations.
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