SK Hynix is making a 321-layer NAND flash memory
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Memory chip maker SK Hynix has said its 321-layer NAND flash chip has a memory capacity of 1Tbit and will be available in 1H25.
The chip makes use of triple-level memory cells, the company said. SK Hynix added that it is the world’s first supplier of NAND flash memory with more than 300 layers. This was achieved by using a novel technology it calls ‘three-plugs’. The plug is a vertical hole through the layers of substrates aimed at creating multiple cells in one pass. As part of the process SK Hynix has developed a low-stress material to prevent the back-filing of the plugs warping the wafers.
The 321-layer product comes with an improvement of 12 percent in data transfer speed and 13 percent in read performance, compared with the previous 238-layer NAND flash, which has a memory capacity of 512Gbits. It also enhances data reading power efficiency by more than 10 pecent, SK Hynix claimed.
Sk Hynix plans to offer the 1Tbit NAND flash memories for nascent AI applications, which require low power and high performance.
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