SK Hynix shows DDR6 CXL compute in memory chips

SK Hynix shows DDR6 CXL compute in memory chips

Technology News |
By Nick Flaherty

SK Hynix is to demonstrate next generation DDR6 compute in memory chips with CXL interfaces next week.

The demonstration at CES 2023 in Las Vegas also includes a new immersion cooling system called enMove and a solid state disk drive (SSD) using the latest PCIe 5.0 protocol and 176-layer NAND chips.

All these are aimed at the data centre to improve data throughput and reduce power consumption in memory sub-systems.

The GDDR6-AiM chip adopts PIM (processing in memory) technology with additional MAC block n the memory to handle AI calculation locally along with the CXL (Compute Express Link) PCIe-based next-generation interconnect protocol for flexible expansion of memory capacity. It is also showing memory devices using the next generation high bandwidth HBM3 protocol.

This will see SK hynix compete with fellow Taiwanese chip maker Samsung directly on CXL and compute in memory applications.

The PS1010 E3.S eSSD improves read and write speed by 130% and 49%, respectively, compared with the previous generation and boost the performance-per-watt by 75%.

“We’re proud to launch PS1010, an ultrahigh-performance product with self-developed controller and firmware, at the CES 2023, the world’s largest technology show,” Yun Jae Yeun, Head of NAND Product Planning, said. “This product will solve pain point of our server-chip customers, while paving the way for a stronger competitiveness in NAND business for us.”

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