sk hynix shows world’s first 321 layer NAND memory chip
sk hynix in Korea has shown samples of the world’s first NAND memory chip with more than 300 layers.
The next generation 1Tbit three level cell NAND memory chip with 321 layers is aimed at PCIe 6.0 and UFS 5.0 applications. This follows on from a 512Gbit version with 238 layers that started mass production in June.
The company plans to start mass production of the 321 layer chip from the first half of 2025.
- Mass production of 238-layer NAND flash starts
- SK Hynix capitalizes on investment in HBM
- $11bn for next memory wafer fab
The 321-layer 1Tb TLC NAND memory chip comes with a 59% improvement in productivity compared with the earlier generation of 238-layer 512Gbit. This comes from the technology development that enabled stacking of more cells and larger storage capacity on a single chip, meaning the total capacity that can be produced on a single wafer increased.
“With another breakthrough to address stacking limitations, SK hynix will open the era of NAND with more than 300 layers and lead the market,” said Jungdal Choi, Head of NAND Development at sk Hynix. “With timely introduction of the high-performance and high-capacity NAND, we will strive to meet the requirements of the AI era and continue to lead innovation,” he said.
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